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2SD1658
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD1658
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
* * *
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Zener diode included between collector and base
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 10 60 10 8 2 0.5 1.5 10 150 -55 to 150 Unit V V V A A
JEDEC
W C C
2-8H1A
JEITA TOSHIBA
Weight: 0.82 g (typ.)
Equivalent Circuit
COLLECTOR
BASE
4 k
800
EMITTER
1
2004-07-26
2SD1658
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 45 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Output 30 Min 50 2000 Typ. 60 100 20 0.4 Max 10 4 70 1.5 2.0 V V MHz pF Unit A mA V
20 s
Input IB2
IB1 IB2
Switching time
Storage time
tstg
4.0
s
VCC = 30 V Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% 0.6
Marking
Lot No.
D1658
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Part No. (or abbreviation code)
2
2004-07-26
2SD1658
IC - VCE
2.0 500 250 200 Common emitter 185 Tc = 25C 5000 3000 10000 Common emitter VCE = 2 V
hFE - IC
IC (A)
1.6
hFE
Collector current
DC current gain
1.2
180
Tc = 100C 1000 500 300 25 100 -55
175 0.8 IB = 170 A
0.4
0 0
0 2 4 6 8 10
50 30 0.01 0.03 0.1 0.3 1 3 5
Collector-emitter voltage
VCE
(V)
Collector current IC (A)
Collector-emitter saturation voltage VCE (sat) (V)
VCE (sat) - IC
3 Common emitter IC/IB = 1000 2.0
IC - VBE
Common emitter VCE = 2 V 1.6
IC (A)
1 25 0.6 100 0.3 1 3
Collector current
Tc = -55C
1.2 Tc = 100C 0.8 25 0.4 -55
Collector current IC (A)
0 0
0.8
1.6
2.4
3.2
4.0
Base-emitter voltage
VBE
(V)
PC - Ta
14
(W)
(1) Tc = Ta
Infinite heat sink
PC
VBE (sat) - IC
Base-emitter saturation voltage VBE (sat) (V)
5 Common emitter IC/IB = 1000
(2) No heat sink 12 (1)
Collector power dissipation
8
3
Tc = -55C 25 100 1 0.3 1 3
4 (2) 0 0
40
80
120
160
200
Collector current IC (A)
Ambient temperature
Ta
(C)
3
2004-07-26
2SD1658
Safe Operating Area
5 3 IC max (pulsed)* IC max (continuous) 10 ms* 100 s*
1
IC (A)
0.5 0.3
DC operation Tc = 25C
1 ms*
Collector current
0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 3 10 30
VCEO max 100
0.01 1
Collector-emitter voltage
VCE
(V)
4
2004-07-26
2SD1658
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
5
2004-07-26

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